Researcher develop high-performance amorphous p-type oxide semiconductor
[ Superior output and transmission properties are demonstrated in tellurium oxide-based amorphous p-type thin-film transistors (Se:Te = 1:4) processed with an optimal selenium alloying ratio. The optimized thin-film transistor showcases a hole mobility of 15 cm2/Vs and an on/off current ratio of 107, closely resembling key electrical attributes of early n-type oxide thin-film transistors. Additionally, … Read more