New transistors based on monolayer black phosphorus and germanium arsenide
[ Fabrication processes for vdW peeling of BP. a,b, Schematic (a) and optical image (b) of a multilayer BP flake exfoliated onto a silicon substrate. c,d, Schematic (c) and optical image (d) of a Pt stripe physically laminated on top of a BP flake. e,f, By physically peeling off the Pt stripe (e), the topmost … Read more